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Silicon Variable Capacitance Diode BB 641 q q q For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance 1 2 Type Ordering Code (tape and reel) Q62702-B792 Pin Configuration Marking 1 2 C A red G Package BB 641 SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage (R 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 - 55 ... + 150 - 55 ... + 150 Unit V V mA C C VR VRM IF Top Tstg Rth JA 450 K/W Semiconductor Group 1 05 95 BB 641 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V ... 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance Value typ. max. Unit IR - - - - 69 2.88 24 - 1.55 1.8 20 200 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 CT/CT - 2.5 - - % - - - nH - rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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